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FDPF8D5N10C

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FDPF8D5N10C

MOSFET N-CH 100V 76A TO220F

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi FDPF8D5N10C, an N-Channel PowerTrench® MOSFET, offers a 100V drain-source breakdown voltage. This device features a continuous drain current capability of 76A at 25°C (Tc) and a low ON-resistance of 8.5mOhm maximum at 76A and 10V Vgs. The FDPF8D5N10C utilizes advanced PowerTrench® technology for optimized switching performance. Key parameters include a gate charge (Qg) of 34 nC at 10V Vgs and input capacitance (Ciss) of 2475 pF at 50V Vds. With a maximum power dissipation of 35W (Tc), this component is housed in a TO-220F-3 package suitable for through-hole mounting. It operates across a wide temperature range of -55°C to 175°C (TJ). Typical applications include power management and switching circuits in industrial and automotive sectors.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C76A (Tc)
Rds On (Max) @ Id, Vgs8.5mOhm @ 76A, 10V
FET Feature-
Power Dissipation (Max)2.4W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id4V @ 130µA
Supplier Device PackageTO-220F-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2475 pF @ 50 V

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