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FDPF7N60NZ

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FDPF7N60NZ

MOSFET N-CH 600V 6.5A TO220F

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDPF7N60NZ is a UniFET-II™ N-Channel Power MOSFET designed for high-performance applications. This device features a 600 V drain-source breakdown voltage (Vdss) and a continuous drain current rating of 6.5 A at 25°C (Tc). With a maximum power dissipation of 33 W (Tc) and a low on-resistance (Rds On) of 1.25 O at 3.25 A and 10 V, it offers efficient switching characteristics. Key parameters include a gate charge (Qg) of 17 nC (Max) at 10 V and an input capacitance (Ciss) of 730 pF (Max) at 25 V. The FDPF7N60NZ is housed in a TO-220F-3 package, suitable for through-hole mounting. Its operating temperature range is from -55°C to 150°C (TJ). This component is widely utilized in power supply units, lighting, and motor control applications.

Additional Information

Series: UniFET-II™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C6.5A (Tc)
Rds On (Max) @ Id, Vgs1.25Ohm @ 3.25A, 10V
FET Feature-
Power Dissipation (Max)33W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-220F-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds730 pF @ 25 V

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