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FDPF7N50U-G

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FDPF7N50U-G

MOSFET N-CH 500V 5A TO220F

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDPF7N50U-G from the UltraFRFET™, Unifet™ series is an N-Channel Power MOSFET designed for high-efficiency switching applications. This through-hole component features a 500 V drain-source voltage (Vdss) and a continuous drain current (Id) of 5 A at 25°C. With a maximum on-resistance (Rds On) of 1.5 Ohm at 2.5 A and 10 V gate-source voltage (Vgs), it offers excellent conduction characteristics. The device supports a gate drive of 10V and has a maximum Vgs of ±30V. Key parameters include a gate charge (Qg) of 16.6 nC at 10 V and input capacitance (Ciss) of 940 pF at 25 V. It is rated for a maximum power dissipation of 31.3 W at 25°C case temperature and operates within an extended temperature range of -55°C to 150°C. The FDPF7N50U-G is presented in a TO-220F-3 package and finds application in power supply units and industrial motor control.

Additional Information

Series: UltraFRFET™, Unifet™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5A (Tc)
Rds On (Max) @ Id, Vgs1.5Ohm @ 2.5A, 10V
FET Feature-
Power Dissipation (Max)31.3W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-220F-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds940 pF @ 25 V

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