FDPF5N60NZ
MOSFET N-CH 600V 4.5A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi UniFET-II™ FDPF5N60NZ is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 4.5A at 25°C (Tc), with a maximum power dissipation of 33W (Tc). The Rds On is specified at a maximum of 2 Ohms at 2.25A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 13 nC (Max) at 10V and an Input Capacitance (Ciss) of 600 pF (Max) at 25V. The device operates over a temperature range of -55°C to 150°C (TJ) and is housed in a through-hole TO-220F-3 package. This MOSFET is suitable for use in power factor correction, switch mode power supplies, and general-purpose high-voltage switching applications.
Additional Information
Series: UniFET-II™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 2.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 33W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 25 V |
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