FDPF5N50FT
MOSFET N-CH 500V 4.5A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDPF5N50FT is a UniFET™ series N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 4.5 A at 25°C (Tc). With a maximum On-Resistance (Rds On) of 1.55 Ohms at 2.25 A and 10 V gate drive, it offers low conduction losses. The device exhibits a typical Gate Charge (Qg) of 8 nC at 10 V and an Input Capacitance (Ciss) of 700 pF at 25 V. The FDPF5N50FT is housed in a TO-220F-3 package, suitable for through-hole mounting. Its maximum power dissipation is rated at 28 W (Tc). This component is utilized in various industries including consumer electronics, industrial automation, and power supplies.
Additional Information
Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.55Ohm @ 2.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 28W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |
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