FDPF52N20T
MOSFET N-CH 200V 52A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FDPF52N20T is an N-Channel UniFET™ MOSFET designed for high-efficiency power switching applications. This component features a 200V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 52A at 25°C (Tc). With a maximum on-resistance (Rds On) of 49mOhm at 26A and 10V Vgs, it offers low conduction losses. The device boasts a gate charge (Qg) of 63 nC at 10V and an input capacitance (Ciss) of 2900 pF at 25V. Packaged in a TO-220F-3 through-hole configuration, it supports a maximum power dissipation of 38.5W (Tc) and operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in various industrial sectors, including power supplies and motor control.
Additional Information
Series: UniFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 52A (Tc) |
| Rds On (Max) @ Id, Vgs | 49mOhm @ 26A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38.5W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 25 V |
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