FDPF51N25RDTU
MOSFET N-CH 250V 51A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDPF51N25RDTU is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 250V and a continuous drain current (Id) capability of 51A at 25°C (Tc). With a maximum power dissipation of 38W (Tc) and a low on-resistance (Rds On) of 60mOhm at 25.5A and 10V gate drive, it ensures efficient power conversion. The device utilizes MOSFET technology and is housed in a TO-220F (LG-Formed) package, suitable for through-hole mounting. Key electrical parameters include a gate charge (Qg) of 70 nC at 10V and input capacitance (Ciss) of 3410 pF at 25V. The operating temperature range is -55°C to 150°C (TJ). This component is commonly found in power supply, motor control, and industrial automation systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 51A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 25.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F (LG-Formed) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3410 pF @ 25 V |
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