FDPF4N60NZ
MOSFET N-CH 600V 3.8A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi UniFET-II™ FDPF4N60NZ is a 600V N-Channel Power MOSFET designed for efficient power switching applications. This component features a continuous drain current capability of 3.8A at 25°C and a maximum power dissipation of 28W. With a low on-resistance of 2.5 Ohms maximum at 1.9A and 10V gate drive, it facilitates reduced conduction losses. The device offers a gate charge of 10.8 nC maximum at 10V and an input capacitance of 510 pF maximum at 25V. Packaged in a TO-220F-3 through-hole configuration, the FDPF4N60NZ is suitable for use in power supplies, lighting, and industrial motor control systems. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: UniFET-II™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 1.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 28W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 25 V |
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