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FDPF39N20TLDTU

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FDPF39N20TLDTU

MOSFET N-CH 200V 39A TO220F

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDPF39N20TLDTU is an N-Channel Power MOSFET designed for high-performance applications. This component features a 200V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 39A at 25°C. With a maximum on-resistance (Rds On) of 66mOhm at 19.5A and 10V gate-source voltage, it offers efficient power switching. The device is housed in a TO-220F package, suitable for through-hole mounting and providing a maximum power dissipation of 37W. Key electrical parameters include a gate charge (Qg) of 49 nC and input capacitance (Ciss) of 2130 pF, both measured at specified voltages. The operating temperature range is from -55°C to 150°C. This MOSFET is commonly utilized in power supply units, motor control, and lighting applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C39A (Tc)
Rds On (Max) @ Id, Vgs66mOhm @ 19.5A, 10V
FET Feature-
Power Dissipation (Max)37W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-220F
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2130 pF @ 25 V

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