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FDPF20N50

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FDPF20N50

MOSFET N-CH 500V 20A TO220F

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi UniFET™ series FDPF20N50 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 20A (Tc). With a maximum On-Resistance (Rds On) of 230mOhm at 10A and 10V, it offers low conduction losses. The device has a specified Gate Charge (Qg) of 59.5 nC at 10V and an Input Capacitance (Ciss) of 3120 pF at 25V. The FDPF20N50 is packaged in a TO-220F-3 Full Pack, suitable for through-hole mounting. It operates across a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 38.5W (Tc). This component is commonly utilized in power supplies, motor control, and lighting applications.

Additional Information

Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Rds On (Max) @ Id, Vgs230mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)38.5W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-220F-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs59.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3120 pF @ 25 V

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