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FDPF15N65YDTU

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FDPF15N65YDTU

MOSFET N-CH 650V 15A TO220F-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDPF15N65YDTU is a UniFET™ series N-Channel Power MOSFET designed for high-voltage applications. This device features a maximum drain-source voltage (Vdss) of 650V and a continuous drain current (Id) of 15A at 25°C. The MOSFET exhibits a low on-resistance (Rds On) of 440mOhm at 7.5A and 10V gate-source voltage, with a typical gate charge (Qg) of 63nC at 10V. Its input capacitance (Ciss) is rated at 3095pF maximum at 25V. The FDPF15N65YDTU is housed in a TO-220F-3 (Y-Forming) through-hole package, capable of dissipating up to 38.5W at 25°C (Tc). Operating temperature range is from -55°C to 150°C (TJ). This component is commonly employed in power factor correction (PFC) and switch mode power supply (SMPS) circuits across various industrial and consumer electronics sectors.

Additional Information

Series: UniFET™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack, Formed Leads
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Rds On (Max) @ Id, Vgs440mOhm @ 7.5A, 10V
FET Feature-
Power Dissipation (Max)38.5W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-220F-3 (Y-Forming)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3095 pF @ 25 V

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