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FDPF12N50T

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FDPF12N50T

MOSFET N-CH 500V 11.5A TO220F

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDPF12N50T is a UniFET™ N-Channel Power MOSFET designed for high-efficiency applications. This component features a drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 11.5A at 25°C. The specified on-resistance (Rds On) is a maximum of 650mOhm at 6A and 10V gate drive. Key characteristics include a gate charge (Qg) of 30 nC at 10V and an input capacitance (Ciss) of 1315 pF at 25V. The device offers a maximum power dissipation of 42W at 25°C case temperature. It is housed in a TO-220F-3 package with a through-hole mounting type and operates within a temperature range of -55°C to 150°C. This MOSFET is suitable for use in power factor correction, switch mode power supplies, and general purpose power switching applications within the consumer electronics and industrial sectors.

Additional Information

Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11.5A (Tc)
Rds On (Max) @ Id, Vgs650mOhm @ 6A, 10V
FET Feature-
Power Dissipation (Max)42W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-220F-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1315 pF @ 25 V

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