FDPF12N50NZT
MOSFET N-CH 500V 11.5A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FDPF12N50NZT is a UniFET-II™ N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 11.5A at 25°C (Tc). With a low on-resistance (Rds On) of 520mOhm at 5.75A and 10V, it minimizes conduction losses. The device offers a maximum power dissipation of 42W (Tc). Key parameters include input capacitance (Ciss) of 1235pF (Max) at 25V and gate charge (Qg) of 30nC (Max) at 400V. The FDPF12N50NZT is housed in a TO-220F-3 package, facilitating through-hole mounting. Its operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for use in power supply units, lighting, and motor control applications within the industrial and consumer electronics sectors.
Additional Information
Series: UniFET-II™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 520mOhm @ 5.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 400 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1235 pF @ 25 V |