Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

FDPF12N50NZ

Banner
productimage

FDPF12N50NZ

MOSFET N-CH 500V 11.5A TO220F

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDPF12N50NZ is an N-Channel UniFET-II™ MOSFET designed for high-voltage applications. This component offers a drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 11.5 A at 25°C (Tc). With a maximum power dissipation of 42 W (Tc) and a low on-resistance of 520 mOhm at 5.75 A and 10 V (Vgs), it provides efficient power switching. The device features a gate charge (Qg) of 30 nC at 10 V and an input capacitance (Ciss) of 1235 pF at 25 V. Packaged in a TO-220F-3 through-hole configuration, it operates within an extended temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in power supply units, lighting, and motor control applications.

Additional Information

Series: UniFET-II™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11.5A (Tc)
Rds On (Max) @ Id, Vgs520mOhm @ 5.75A, 10V
FET Feature-
Power Dissipation (Max)42W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-220F-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1235 pF @ 25 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
FDD5N60NZTM

MOSFET N-CH 600V 4A DPAK

product image
FDPF8N50NZU

MOSFET N-CH 500V 6.5A TO220F

product image
FDPF5N50NZF

MOSFET N-CH 500V 4.2A TO220F