FDPF10N60ZUT
MOSFET N-CH 600V 9A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FDPF10N60ZUT is a UniFET™ series N-Channel Power MOSFET designed for high-efficiency applications. This device features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 9A at 25°C, with a maximum power dissipation of 42W. The Rds(on) is specified at 800mOhm maximum at 4.5A and 10V gate drive. Key parameters include a gate charge (Qg) of 40nC at 10V and an input capacitance (Ciss) of 1980pF at 25V. The device is housed in a TO-220F-3 through-hole package, facilitating ease of assembly in power supply, lighting, and industrial motor control applications. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1980 pF @ 25 V |
Request a Quote
Clients Also Buy
FDD18N20LZ
MOSFET N-CH 200V 16A DPAK
FDB28N30TM
MOSFET N-CH 300V 28A D2PAK
FDPF51N25
MOSFET N-CH 250V 51A TO220F
