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FDP8896

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FDP8896

MOSFET N-CH 30V 16A/92A TO220-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi FDP8896 is an N-Channel Power MOSFET from the PowerTrench® series, housed in a TO-220-3 package. This device features a Drain-Source Voltage (Vdss) of 30V and offers a continuous drain current of 16A at ambient temperature and 92A at case temperature. The maximum power dissipation is 80W (Tc). Key electrical characteristics include a low on-resistance (Rds On) of 5.9mOhm at 35A and 10V, and a gate charge (Qg) of 67 nC at 10V. Input capacitance (Ciss) is a maximum of 2525 pF at 15V. It supports a drive voltage range of 4.5V to 10V and a maximum gate-source voltage of ±20V. The threshold voltage (Vgs(th)) is 2.5V at 250µA. Operating temperature range is -55°C to 175°C (TJ). This component is suitable for applications in power management, automotive, and industrial sectors.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C16A (Ta), 92A (Tc)
Rds On (Max) @ Id, Vgs5.9mOhm @ 35A, 10V
FET Feature-
Power Dissipation (Max)80W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageTO-220-3
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2525 pF @ 15 V

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