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FDP8878

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FDP8878

MOSFET N-CH 30V 40A TO220-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDP8878 is a PowerTrench® series N-Channel MOSFET designed for demanding applications. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 40A at 25°C with a maximum power dissipation of 40.5W (Tc). With a low Rds(On) of 15mOhm at 40A and 10V, and a gate charge (Qg) of 23nC at 10V, it offers efficient switching characteristics. The input capacitance (Ciss) is 1235pF at 15V. The FDP8878 utilizes MOSFET (Metal Oxide) technology and is housed in a TO-220-3 through-hole package. It operates across an extended temperature range of -55°C to 175°C (TJ) and supports gate-source voltages up to ±20V, with a threshold voltage (Vgs(th)) of 2.5V at 250µA. This device finds application in various industrial and automotive sectors.

Additional Information

Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Rds On (Max) @ Id, Vgs15mOhm @ 40A, 10V
FET Feature-
Power Dissipation (Max)40.5W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageTO-220-3
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1235 pF @ 15 V

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