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FDP8874

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FDP8874

MOSFET N-CH 30V 16A/114A TO220-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDP8874 is a PowerTrench® series N-Channel MOSFET designed for power management applications. This through-hole component features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 16 A at 25°C ambient, scaling to 114 A at 25°C case temperature. With a maximum power dissipation of 110 W (Tc) and a low on-resistance (Rds On) of 5.3 mOhm at 40 A and 10 V gate drive, it offers efficient power switching. The device supports gate drive voltages from 4.5 V to 10 V and has a maximum gate-source voltage (Vgs) of ±20 V. Key electrical characteristics include a gate charge (Qg) of 72 nC at 10 V and input capacitance (Ciss) of 3130 pF at 15 V. Operating across a temperature range of -55°C to 175°C, the FDP8874 is suitable for use in computing, industrial, and automotive sectors. It is supplied in a TO-220-3 package.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C16A (Ta), 114A (Tc)
Rds On (Max) @ Id, Vgs5.3mOhm @ 40A, 10V
FET Feature-
Power Dissipation (Max)110W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageTO-220-3
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3130 pF @ 15 V

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