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FDP8447L

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FDP8447L

MOSFET N-CH 40V 12A/50A TO220-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi FDP8447L is a PowerTrench® N-Channel MOSFET designed for demanding power applications. This component features a 40V drain-source breakdown voltage (Vdss) and offers a continuous drain current (Id) of 12A at 25°C ambient temperature and 50A at 25°C case temperature. The low on-resistance is specified as a maximum of 8.7mOhm at 14A and 10V gate-source voltage. With a maximum gate charge (Qg) of 49nC at 10V and an input capacitance (Ciss) of 2500pF at 20V, this MOSFET is optimized for efficient switching. Power dissipation capabilities are 2W (Ta) and 60W (Tc). The FDP8447L is housed in a TO-220-3 package, suitable for through-hole mounting, and operates within a temperature range of -55°C to 150°C. This device finds application in areas such as power supplies, motor control, and battery management systems.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs8.7mOhm @ 14A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-220-3
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2500 pF @ 20 V

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