FDP80N06
MOSFET N-CH 60V 80A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDP80N06 is a UniFET™ series N-Channel Power MOSFET designed for demanding applications. This device features a 60 V drain-source breakdown voltage and a continuous drain current capability of 80 A at 25°C (Tc). With a low on-resistance of 10 mOhm at 40 A and 10 V Vgs, it offers excellent conduction efficiency. The FDP80N06 boasts a maximum power dissipation of 176 W (Tc) and a wide operating temperature range of -55°C to 175°C (TJ). Key electrical parameters include a gate charge (Qg) of 74 nC at 10 V and input capacitance (Ciss) of 3190 pF at 25 V. Packaged in a TO-220-3 through-hole configuration, this MOSFET is suitable for power supply, motor control, and power management systems.
Additional Information
Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 176W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3190 pF @ 25 V |
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