FDP7N50
MOSFET N-CH 500V 7A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDP7N50 is a UniFET™ N-Channel Power MOSFET designed for efficient power switching applications. It features a Drain-to-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 7A at 25°C, with a maximum power dissipation of 89W. The device exhibits a low on-resistance of 900mOhm at 3.5A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 16.6nC at 10V and an Input Capacitance (Ciss) of 940pF at 25V. This through-hole component is housed in a TO-220-3 package and operates across a temperature range of -55°C to 150°C. The FDP7N50 is suitable for use in power supplies, motor control, and lighting applications.
Additional Information
Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 940 pF @ 25 V |
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