FDP75N08A
MOSFET N-CH 75V 75A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi UniFET™ FDP75N08A is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a drain-source breakdown voltage (Vdss) of 75 V and a continuous drain current (Id) of 75 A at 25°C. With a low on-resistance (Rds On) of 11 mOhm at 37.5 A and 10 V gate drive, it minimizes conduction losses. The device boasts a maximum power dissipation of 137 W (Tc) and a gate charge (Qg) of 104 nC at 10 V. Key parameters include input capacitance (Ciss) of 4468 pF at 25 V and a threshold voltage (Vgs(th)) of 4 V at 250 µA. The FDP75N08A is housed in a standard TO-220-3 package for through-hole mounting, suitable for demanding environments with an operating temperature range of -55°C to 150°C (TJ). This MOSFET finds utility in industries such as industrial power supplies, automotive electronics, and general-purpose power switching.
Additional Information
Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 37.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 137W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 104 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4468 pF @ 25 V |
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