FDP65N06
MOSFET N-CH 60V 65A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDP65N06 is a UniFET™ N-Channel MOSFET designed for high-performance switching applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 65A at 25°C. With a maximum Rds On of 16mOhm at 32.5A and 10V Vgs, it offers low conduction losses. The device boasts a power dissipation of 135W (Tc) and a gate charge (Qg) of 43nC at 10V. Its input capacitance (Ciss) is 2170pF at 25V. Packaged in a TO-220-3, the FDP65N06 is suitable for through-hole mounting and operates across an industrial temperature range of -55°C to 150°C. This MOSFET is commonly utilized in power supply units, motor control, and automotive applications.
Additional Information
Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 32.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 135W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2170 pF @ 25 V |
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