FDP5N50NZ
MOSFET N-CH 500V 4.5A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDP5N50NZ is a UniFET-II™ N-Channel Power MOSFET designed for demanding applications. This through-hole component features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 4.5 A at 25°C (Tc). With a maximum Power Dissipation of 78 W (Tc) and an Rds(on) of 1.5 Ohm at 2.25 A and 10 V drive, it offers efficient power handling. The device exhibits a typical Gate Charge (Qg) of 12 nC at 10 V and an Input Capacitance (Ciss) of 440 pF at 25 V. Operating across a temperature range of -55°C to 150°C (TJ), the FDP5N50NZ in a TO-220-3 package is suitable for use in power supply, lighting, and motor control applications.
Additional Information
Series: UniFET-II™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 78W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 25 V |
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