FDP55N06
MOSFET N-CH 60V 55A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi FDP55N06, an N-Channel UniFET™ MOSFET, offers a 60V drain-source voltage and a continuous drain current of 55A at 25°C (Tc). This through-hole component, packaged in a TO-220-3, features a low on-resistance of 22mOhm at 27.5A and 10V Vgs. With a gate charge of 37 nC at 10V and input capacitance of 1510 pF at 25V, it's designed for efficient switching. The maximum power dissipation is 114W (Tc) with an operating temperature range of -55°C to 150°C. This device is utilized in power supply, motor control, and industrial applications.
Additional Information
Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 27.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 114W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1510 pF @ 25 V |
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