FDP4020P
MOSFET P-CH 20V 16A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDP4020P is a P-Channel MOSFET designed for power switching applications. This device features a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 16A at 25°C. The Rds(on) is specified at a maximum of 80mOhm at 8A and 4.5V Vgs. Key parameters include input capacitance (Ciss) of 665pF at 10V and gate charge (Qg) of 13nC at 4.5V. This MOSFET is packaged in a TO-220-3 through-hole configuration with a maximum power dissipation of 37.5W (Tc). The operating temperature range is -65°C to 175°C (TJ). This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 8A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 37.5W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 665 pF @ 10 V |
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