FDP39N20
MOSFET N-CH 200V 39A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDP39N20 is a UniFET™ series N-Channel Power MOSFET designed for high-efficiency power switching applications. This through-hole device features a Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 39A at 25°C. With a maximum power dissipation of 251W (Tc), it offers low on-resistance of 66mOhm at 19.5A and 10V Vgs. Key parameters include a gate charge (Qg) of 49 nC @ 10V and input capacitance (Ciss) of 2130 pF @ 25V. The FDP39N20 is suitable for use in industrial, automotive, and power supply applications requiring robust performance and thermal management. It is supplied in a TO-220-3 package.
Additional Information
Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 39A (Tc) |
| Rds On (Max) @ Id, Vgs | 66mOhm @ 19.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 251W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2130 pF @ 25 V |
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