FDP2D9N12C
PTNG 120V N-FET TO220Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDP2D9N12C is a PowerTrench® N-Channel MOSFET designed for high-performance applications. This TO-220 packaged device offers a Drain-Source Voltage (Vdss) of 120 V and continuous drain current capabilities of 18 A at a case temperature of 25°C (Ta) and 210 A at a case temperature of 25°C (Tc). Key electrical characteristics include a maximum Rds On of 2.9 mOhm at 100 A and 10 V, with a gate charge (Qg) of 109 nC at 10 V. Input capacitance (Ciss) is 8894 pF at 60 V. It operates within a temperature range of -55°C to 175°C. This component is suitable for power conversion, motor control, and power management systems across various industrial and automotive sectors.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 210A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.9mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 333W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 686µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 120 V |
| Gate Charge (Qg) (Max) @ Vgs | 109 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8894 pF @ 60 V |
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