FDP2710-F085
MOSFET N-CH 250V 4A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDP2710-F085 is an N-Channel Power Trench® MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 250V and a continuous drain current (Id) of 4A at 25°C, with significant power dissipation capability of 403W at the case temperature. Its low on-resistance of 47mOhm is achieved at 50A and 10V gate-source voltage, supported by a gate drive voltage of 10V. Key electrical characteristics include a maximum input capacitance (Ciss) of 5690pF at 25V and a gate charge (Qg) of 101nC at 10V. The FDP2710-F085 is housed in a TO-220-3 through-hole package and operates across a wide temperature range of -55°C to 150°C. Qualified to AEC-Q101 standards with an automotive grade, this MOSFET is suitable for use in automotive and industrial power control systems.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 47mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 403W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 101 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5690 pF @ 25 V |
| Qualification | AEC-Q101 |
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