FDP26N40
MOSFET N-CH 400V 26A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDP26N40 is an N-Channel UniFET™ MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 400V and a continuous Drain Current (Id) of 26A at 25°C. With a maximum power dissipation of 265W (Tc) and a low on-resistance (Rds On) of 160mOhm at 13A and 10V Vgs, it offers efficient power handling. The TO-220-3 package facilitates through-hole mounting. Key electrical parameters include a gate charge (Qg) of 60nC at 10V and input capacitance (Ciss) of 3185pF at 25V. This MOSFET is suitable for use in power supply, lighting, and industrial applications. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 265W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3185 pF @ 25 V |
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