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FDP24N40

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FDP24N40

MOSFET N-CH 400V 24A TO220-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi FDP24N40 is an N-Channel UniFET™ MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 400V and supports a continuous Drain Current (Id) of 24A at 25°C. The Rds On is specified at a maximum of 175mOhm at 12A and 10V gate drive. With a maximum power dissipation of 227W (Tc), it is suitable for demanding power conversion and control circuits. Key electrical parameters include a gate charge (Qg) of 60nC (max) at 10V and input capacitance (Ciss) of 3020pF (max) at 25V. The device operates across a temperature range of -55°C to 150°C (TJ) and is housed in a TO-220-3 package for through-hole mounting. This MOSFET is utilized in industries such as industrial power supplies and consumer electronics.

Additional Information

Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Rds On (Max) @ Id, Vgs175mOhm @ 12A, 10V
FET Feature-
Power Dissipation (Max)227W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-220-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)400 V
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3020 pF @ 25 V

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