FDP20N50
MOSFET N-CH 500V 20A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi FDP20N50 is a UniFET™ series N-Channel Power MOSFET designed for high-efficiency switching applications. This TO-220-3 packaged component features a 500V Drain-Source Voltage (Vdss) and a continuous drain current capability of 20A at 25°C (Tc). With a maximum power dissipation of 250W (Tc) and a low on-resistance of 230mOhm at 10A and 10V, it offers excellent conduction loss performance. Key electrical characteristics include a typical gate charge of 59.5 nC at 10V and an input capacitance of 3120 pF at 25V. The FDP20N50 is suitable for use in power supply units, motor control, and lighting applications. It operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 59.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3120 pF @ 25 V |
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