FDP19N40
MOSFET N-CH 400V 19A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi UniFET™ FDP19N40 is an N-Channel power MOSFET designed for high-voltage applications. Featuring a Drain-to-Source Voltage (Vdss) of 400V and a continuous drain current (Id) of 19A at 25°C, this component offers a maximum power dissipation of 215W. The FDP19N40 has a low on-resistance (Rds On) of 240mOhm at 9.5A and 10V, with a gate charge (Qg) of 40nC at 10V. Its input capacitance (Ciss) is 2115pF at 25V. Packaged in a TO-220-3 through-hole configuration, this MOSFET operates across a wide temperature range of -55°C to 150°C. It finds application in power supply units, motor control, and lighting systems.
Additional Information
Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 9.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 215W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2115 pF @ 25 V |
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