FDP15N65
MOSFET N-CH 650V 15A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi FDP15N65, a UniFET™ series N-Channel Power MOSFET, offers a 650V drain-source breakdown voltage and a continuous drain current capability of 15A at 25°C. This component features a low on-resistance of 440mOhm maximum at 7.5A, 10V, facilitating efficient power switching. With a maximum power dissipation of 250W, it is suitable for demanding applications. Key parameters include a gate charge of 63 nC at 10V and an input capacitance of 3095 pF at 25V. The FDP15N65 is housed in a TO-220-3 package, designed for through-hole mounting. This device finds application in power supplies, industrial motor control, and lighting systems. Its operating temperature range is -55°C to 150°C.
Additional Information
Series: UniFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 440mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3095 pF @ 25 V |
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