FDP150N10A
MOSFET N-CH 100V 50A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDP150N10A is an N-Channel Power MOSFET from the PowerTrench® series, packaged in a TO-220-3 through-hole configuration. This component features a Drain-Source Voltage (Vdss) of 100 V and a continuous Drain Current (Id) of 50 A at 25°C (Tc). Its low on-resistance is specified at a maximum of 15 mOhm at 50 A and 10 V gate drive. Key electrical parameters include a maximum gate charge (Qg) of 21 nC at 10 V and input capacitance (Ciss) of 1440 pF at 50 V. The device supports a maximum gate-source voltage (Vgs) of ±20 V and operates across a temperature range of -55°C to 175°C (TJ). With a maximum power dissipation of 91W (Tc), this MOSFET is suitable for applications in power supply units, motor control, and industrial automation.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 91W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1440 pF @ 50 V |
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