FDP13AN06A0-SW82126
MOSFET N-CH 60V TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDP13AN06A0-SW82126 is an N-Channel MOSFET designed for high-efficiency power switching applications. This component features a drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 10.9A at 25°C ambient, scaling to 62A at 25°C case temperature. With a maximum power dissipation of 115W (Tc) and a low on-resistance (Rds On) of 13.5mOhm at 62A and 10V gate drive, it ensures minimal conduction losses. The device utilizes Metal Oxide technology and is housed in a standard TO-220-3 package for through-hole mounting. It offers a gate charge (Qg) of 29 nC at 10V and input capacitance (Ciss) of 1350 pF at 25V. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for use in industrial, automotive, and consumer electronics power management systems. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.9A (Ta), 62A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 62A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 115W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 25 V |
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