FDP12N60NZ
MOSFET N-CH 600V 12A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi UniFET-II™ FDP12N60NZ is a 600 V, N-Channel Power MOSFET designed for high-efficiency switching applications. Featuring a continuous drain current of 12A at 25°C and a maximum power dissipation of 240W, this device utilizes advanced MOSFET technology for reduced conduction and switching losses. Key parameters include a low on-resistance of 650mOhm at 6A and 10V, a gate charge (Qg) of 34 nC at 10V, and an input capacitance (Ciss) of 1676 pF at 25V. The FDP12N60NZ is housed in a standard TO-220-3 package, facilitating through-hole mounting. This component finds application in power supply units, motor control, and lighting solutions across various industrial and consumer electronics sectors.
Additional Information
Series: UniFET-II™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 240W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1676 pF @ 25 V |
Request a Quote
Clients Also Buy
FDD5N60NZTM
MOSFET N-CH 600V 4A DPAK
FDPF8N50NZU
MOSFET N-CH 500V 6.5A TO220F
FDPF5N50NZF
MOSFET N-CH 500V 4.2A TO220F