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FDP045N10A-F032

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FDP045N10A-F032

MOSFET N-CH 100V 120A TO220-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi FDP045N10A-F032 is a PowerTrench® series N-Channel MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 120A at 25°C (Tc), with a maximum power dissipation of 263W (Tc). The Rds On is specified at a low 4.5mOhm at 100A and 10V gate drive. Key electrical parameters include a Gate Charge (Qg) of 74 nC (Max) at 10V and an input capacitance (Ciss) of 5270 pF (Max) at 50V. The device operates within a temperature range of -55°C to 175°C (TJ) and is housed in a standard TO-220-3 package, suitable for through-hole mounting. This MOSFET is utilized in industries such as industrial power supplies, automotive electronics, and power management systems.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Rds On (Max) @ Id, Vgs4.5mOhm @ 100A, 10V
FET Feature-
Power Dissipation (Max)263W (Tc)
Vgs(th) (Max) @ Id4V @ 250mA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5270 pF @ 50 V

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