FDP027N08B
MOSFET N-CH 80V 120A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi FDP027N08B is an N-Channel Power MOSFET from the PowerTrench® series. This device features a Drain-to-Source Voltage (Vdss) of 80V and a continuous Drain Current (Id) of 120A at 25°C (Tc), with a maximum power dissipation of 246W (Tc). The low on-resistance, specified as 2.7mOhm at 100A and 10V Vgs, is a key characteristic for high-efficiency power switching applications. Key parameters include a maximum gate-source voltage (Vgs) of ±20V, a gate threshold voltage (Vgs(th)) of 4.5V at 250µA, and a gate charge (Qg) of 178 nC at 10V. Input capacitance (Ciss) is rated at 13530 pF at 40V. The FDP027N08B is housed in a TO-220-3 package for through-hole mounting and operates within an extended temperature range of -55°C to 175°C (TJ). This component is suitable for use in industrial, automotive, and telecommunications power management systems.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 246W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 178 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13530 pF @ 40 V |
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