FDN5630-G
MOSFET N-CH 60V 1.7A SUPERSOT3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FDN5630-G is a PowerTrench® series N-Channel MOSFET designed for efficient power management applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 1.7A at 25°C ambient temperature, with a maximum power dissipation of 500mW (Ta). The device exhibits a maximum Rds On of 100mOhm at 1.7A and 10V Vgs. Key characteristics include a gate charge (Qg) of 10 nC maximum at 10V and an input capacitance (Ciss) of 560 pF maximum at 15V Vds. The FDN5630-G is housed in a compact SOT-23-3 surface mount package, suitable for high-density circuit designs. It is commonly employed in consumer electronics, industrial automation, and communication infrastructure. The operating temperature range is -55°C to 150°C.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 1.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-23-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 560 pF @ 15 V |
Request a Quote
Clients Also Buy
FDN338P
MOSFET P-CH 20V 1.6A SUPERSOT3
FDG6332C
MOSFET N/P-CH 20V 0.7A SC88
FDC6420C
MOSFET N/P-CH 20V 3A/2.2A SSOT6
