FDN5630-B8
FET 60V 1.0 MOHM SSOT3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi FDN5630-B8 is an N-Channel MOSFET from the PowerTrench® series. This device features a drain-source breakdown voltage (Vdss) of 60V and a continuous drain current (Id) of 1.7A at 25°C ambient. The on-resistance (Rds On) is specified at a maximum of 100mOhm at 1.7A and 10V gate-source voltage. The MOSFET utilizes Metal Oxide technology and is housed in a SOT-23-3 surface mount package. Key parameters include a maximum power dissipation of 500mW (Ta) and a gate charge (Qg) of 10 nC at 10V. This component is suitable for applications in industrial automation, consumer electronics, and computing.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 1.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-23-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 560 pF @ 15 V |