FDN5618P-B8
FET -60V 1.7 MOHM SSOT3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FDN5618P-B8 is a P-Channel PowerTrench® MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 60V and a continuous drain current (Id) capability of 1.25A at 25°C. With a low on-resistance (Rds On) of 170mOhm at 1.25A and 10V Vgs, it minimizes conduction losses. The SuperSOT™-3 package offers excellent thermal performance with a maximum power dissipation of 460mW (Ta). Key parameters include a gate charge (Qg) of 13.8 nC at 10V Vgs and input capacitance (Ciss) of 430 pF at 30V Vds. Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for use in power management, battery charging, and general-purpose switching applications.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.25A (Ta) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 1.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 460mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SuperSOT™-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 30 V |