FDN360P-NBGT003B
MOSFET P-CH 30V 2A SOT23-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDN360P-NBGT003B is a P-Channel PowerTrench® MOSFET designed for efficient power switching applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 2A at 25°C ambient. The device exhibits a maximum on-resistance of 80mOhm at 2A drain current and 10V gate-source voltage, with a threshold voltage (Vgs(th)) of 3V at 250µA. The gate charge (Qg) is specified at 9 nC maximum at 10V, and input capacitance (Ciss) is up to 298 pF at 15V. With a maximum power dissipation of 500mW at 25°C ambient, this MOSFET is housed in a SOT-23-3 surface mount package. Typical applications include battery management, load switching, and power control circuits in consumer electronics and industrial systems.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-23-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 298 pF @ 15 V |
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