FDN337N-F169
MOSFET N-CH 30V 2.2A SOT23-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDN337N-F169 is an N-channel power MOSFET designed for efficient switching applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 2.2A at 25°C. The Rds On is specified at a maximum of 65mOhm at 2.2A and 4.5V Vgs. With a Gate Charge (Qg) of 9 nC at 4.5V Vgs and an input capacitance (Ciss) of 300 pF at 10V Vds, it offers good switching performance. The device is housed in a compact SOT-23-3 (TO-236-3, SC-59) surface-mount package, enabling high-density designs. It is suitable for operation across a wide temperature range of -55°C to 150°C. The maximum power dissipation is 500mW. This MOSFET finds applications in consumer electronics and industrial power management.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 2.2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-23-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 10 V |
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