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FDN336P-NL

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FDN336P-NL

MOSFET P-CH 20V 1.3A SUPERSOT3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDN336P-NL is a P-Channel MOSFET from the PowerTrench® series, packaged in a SOT-23-3 (TO-236-3, SC-59) surface mount configuration. This device features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain current (Id) of 1.3A at 25°C ambient. The Rds(On) is specified at 200mOhm maximum at 1.3A and 4.5V Vgs. Gate drive voltage options for optimal Rds(On) performance are 2.5V and 4.5V, with a maximum Gate-Source voltage (Vgs) of ±8V. Input capacitance (Ciss) is a maximum of 330pF at 10V Vds, and Gate Charge (Qg) is 5nC at 4.5V Vgs. Power dissipation is 500mW at 25°C ambient. The operating temperature range is -55°C to 150°C. This component is commonly utilized in power management applications across various industries.

Additional Information

Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C1.3A (Ta)
Rds On (Max) @ Id, Vgs200mOhm @ 1.3A, 4.5V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device PackageSOT-23-3
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds330 pF @ 10 V

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