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FDMT800150DC-22897

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FDMT800150DC-22897

FET 150V 6.5 MOHMS PQFN88

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi FDMT800150DC-22897 is an N-Channel PowerTrench® MOSFET designed for high-efficiency power conversion applications. This device features a drain-source voltage (Vdss) of 150V and a low on-resistance (Rds On) of 6.5mOhm at 15A and 10V Vgs, minimizing conduction losses. It offers continuous drain current capabilities of 15A (Ta) and 99A (Tc) with a maximum power dissipation of 3.2W (Ta) and 156W (Tc). The device utilizes an 8-Dual Cool™88 package for enhanced thermal performance. Key electrical characteristics include a gate charge (Qg) of 108 nC (max) at 10V and input capacitance (Ciss) of 8205 pF (max) at 75V. This component is suitable for demanding applications in areas such as industrial power supplies, automotive systems, and advanced computing. It operates within a temperature range of -55°C to 150°C.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C15A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs6.5mOhm @ 15A, 10V
FET Feature-
Power Dissipation (Max)3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device Package8-Dual Cool™88
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)150 V
Gate Charge (Qg) (Max) @ Vgs108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8205 pF @ 75 V

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