FDMT1D3N08B
MOSFET N-CH 80V 164A 8DL COOL88Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FDMT1D3N08B is an N-Channel PowerTrench® MOSFET designed for demanding applications. This component features a 80 V drain-to-source voltage (Vdss) and can handle a continuous drain current of 164 A at 25°C. With a low on-resistance (Rds On) of 1.35 mOhm at 36 A and 10 V, it minimizes conduction losses. The device offers a maximum power dissipation of 178 W at 25°C and operates across a temperature range of -55°C to 150°C. Key electrical characteristics include a gate charge (Qg) of 260 nC at 10 V and input capacitance (Ciss) of 19600 pF at 40 V. The FDMT1D3N08B is packaged in an 8-Dual Cool™88 (8-PowerVDFN) for surface mounting, supplied on tape and reel. This MOSFET is suitable for use in power management, automotive, and industrial power conversion systems.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 164A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.35mOhm @ 36A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 178W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-Dual Cool™88 |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 19600 pF @ 40 V |
Request a Quote
Clients Also Buy
FDN338P
MOSFET P-CH 20V 1.6A SUPERSOT3
FDG6332C
MOSFET N/P-CH 20V 0.7A SC88
FDC6420C
MOSFET N/P-CH 20V 3A/2.2A SSOT6
