FDMS8692
MOSFET N-CH 30V 12A/28A 8PQFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi FDMS8692 is a PowerTrench® series N-Channel MOSFET designed for efficient power management applications. This component features a 30V drain-source breakdown voltage (Vdss) and offers a continuous drain current (Id) of 12A at 25°C ambient and 28A at 25°C case temperature. The device exhibits a low on-resistance (Rds On) of 9mOhm maximum at 12A and 10V gate-source voltage. With a maximum power dissipation of 2.5W ambient and 41W case temperature, it is suitable for demanding thermal environments. The FDMS8692 is housed in an 8-PQFN (5x6) package, facilitating surface mounting and high-density board designs. Key parameters include 21 nC gate charge (Qg) at 10V and 1265 pF input capacitance (Ciss) at 15V. Operating temperature ranges from -55°C to 150°C. This MOSFET is utilized in various industries including consumer electronics, computing, and industrial power supplies.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Digi-Reel®Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 28A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 41W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1265 pF @ 15 V |
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