FDMS8680
MOSFET N-CH 30V 14A/35A 8PQFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDMS8680 is an N-Channel PowerTrench® MOSFET designed for high-efficiency power conversion applications. This device features a 30V drain-source voltage (Vdss) and offers a continuous drain current of 14A at ambient temperature and 35A at case temperature. With a maximum on-resistance (Rds On) of 7mOhm at 14A and 10V Vgs, it minimizes conduction losses. The FDMS8680 supports gate drive voltages from 4.5V to 10V and has a maximum gate charge of 26 nC. Its low input capacitance (Ciss) of 1590 pF at 15V Vds contributes to efficient switching. Rated for a maximum power dissipation of 2.5W (Ta) and 50W (Tc), this MOSFET operates across a wide temperature range of -55°C to 150°C (TJ). It is housed in an 8-PQFN (5x6) package and supplied on tape and reel. Typical applications include power management in computing, consumer electronics, and industrial systems.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1590 pF @ 15 V |
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