FDMS8660S
MOSFET N-CH 30V 25A/40A 8PQFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDMS8660S is a PowerTrench® series N-Channel MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 30V and offers a continuous drain current of 25A at ambient temperature and 40A at case temperature. With a maximum on-resistance (Rds On) of 2.4mOhm at 25A and 10V, it minimizes conduction losses. The device supports gate drive voltages from 4.5V to 10V and has a maximum gate charge (Qg) of 113 nC at 10V. Its low input capacitance (Ciss) is 4345 pF at 15V. The FDMS8660S is packaged in an 8-PQFN (5x6) for surface mounting, with a power dissipation capability of 2.5W (Ta) and 83W (Tc). Operating temperature range is -55°C to 150°C (TJ). This MOSFET is commonly utilized in power management, automotive, and industrial applications requiring robust and efficient switching.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 83W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 113 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4345 pF @ 15 V |
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